AEML, NTUST - SEM Virtual Lab - Advanced Engineering Materials Laboratory, National Taiwan University of Science and Technology
SEM Virtual Lab: Scanning Electron Microscope Simulator掃描式電子顯微鏡虛擬實驗室
Instrument Control Panel儀器操作面板
Specimen試樣
Geometry & Aperture幾何配置與光圈
default內定值 °
default內定值 mm
default內定值 ° (elevation / EDS take-off)(仰角/EDS 取出角)
default內定值 µm
Electron Gun電子槍
default內定值 A
default內定值 keV
default內定值
Detector & Scan偵測器與掃描
Imaging signal影像訊號
EDS (Energy Dispersive Spectroscopy)EDS 能量散佈光譜
default內定值 s
Live Beam & Interaction Readouts即時電子束與作用體積參數
| Filament emission (saturation)燈絲發射 (飽和度) | |
|---|---|
| Estimated filament life預估燈絲壽命 | |
| Probe current探針電流 Ip | |
| Probe diameter電子束探針直徑 dp | |
| Convergence semi-angle收斂半角 α | |
| Depth of field景深 | |
| Field of view (width)視野寬度 | |
| Pixel size像素尺寸 | |
| Defocus Δf失焦量 Δf | |
| Electron range (Kanaya–Okayama)電子穿透範圍 (Kanaya–Okayama) | |
| X-ray generation range (Anderson–Hasler, Ec=1 keV)X 光產生範圍 (Anderson–Hasler) |
Operation Console: Magnification, Focus & Stigmation操作台:放大倍率、焦距與散光調整
Magnification放大倍率
Focus: coarse (mm)焦距粗調 (mm)
Focus: fine (µm)焦距細調 (µm)
Stigmator XX 方向散光
Stigmator YY 方向散光
Image Adjustment影像調整
Brightness亮度
Contrast對比
Gamma伽瑪 (灰階曲線)
Defaults: brightness 50, contrast 50, gamma 1.00. Tip: hover over the image and use Shift + mouse wheel for brightness, Ctrl + mouse wheel for contrast.內定值:亮度 50、對比 50、伽瑪 1.00。提示:滑鼠移到影像上,Shift + 滾輪調整亮度,Ctrl + 滾輪調整對比。
Filament is not heated: no electron beam.燈絲未加熱:沒有電子束。
Filament under-saturated: emission is low, so the image is dark and noisy. Raise the filament current to the saturation point.燈絲未達飽和:發射電流不足,影像偏暗且雜訊多,請將燈絲電流提高至飽和點。
Filament current is beyond saturation: no gain in brightness, but the filament life is shortened.燈絲電流超過飽和點:亮度不再提升,但燈絲壽命會明顯縮短。
Image is out of focus (focus setting differs from WD). Use the coarse/fine focus sliders or Auto focus.影像失焦(焦距設定與工作距離不一致),請調整焦距粗調/細調或按自動對焦。
Astigmatism present: features streak in one direction when slightly under- or over-focused. Adjust stigmator X/Y.存在散光:輕微欠焦或過焦時,影像沿單一方向拉長,請調整 X/Y 散光。
Charging! A non-conductive specimen without coating is being imaged at this beam energy. Apply a C or Au coating, or lower the beam energy (about 1–1.5 keV).荷電效應!非導體試樣未鍍膜,請加上碳或金鍍膜,或降低電子束能量(約 1–1.5 keV)。
Tip: polished cement-based sections are nearly flat; BSE (atomic-number contrast) reveals phases far better than SE.提示:水泥系拋光切片幾乎平坦,以背散射電子(原子序對比)觀察相組成遠優於二次電子。
Specimen Image試樣影像
Zoom (magnification)放大/縮小 (倍率)
Pan (stage)平移 (載台)
Working distance工作距離
Drag: move specimen stage · Mouse wheel: magnification · Double-click: center on point · EDS tool: click a point or drag a rectangle拖曳:移動試樣載台 · 滾輪:放大倍率 · 雙擊:置中 · EDS 工具:點選位置或拖曳框選區域
EDS Spectrum: Counts vs. Energy (eV)EDS 光譜:計數 vs. 能量 (eV)
Energy axis zoom能量軸放大/縮小
Pan平移
Counts axis計數軸
Mouse wheel: zoom energy axis at cursor · Shift + wheel: zoom counts axis · Drag: pan · Shift + drag: zoom to selected energy range · Double-click: reset滾輪:以游標為中心縮放能量軸 · Shift + 滾輪:縮放計數軸 · 拖曳:平移 · Shift + 拖曳:框選能量範圍放大 · 雙擊:重設
Enable the EDS detector and press “Acquire spectrum”.請開啟 EDS 偵測並按下「擷取光譜」。
Low X-ray count rate: increase the spot size (probe current) or the live time for better statistics.X 光計數率偏低:請加大電子束點大小(探針電流)或延長量測時間以改善統計。
Dead time above 40 %: reduce the spot size (probe current).死時間超過 40 %:請減小電子束點大小(探針電流)。
Overvoltage U = E0/Ec < 2 for some K lines: excitation is inefficient. Use E0 of at least twice the highest edge energy of interest.部分 K 線的過電壓比 U = E0/Ec < 2,激發效率不佳;E0 宜至少為欲分析元素最高吸收邊能量的兩倍。
Standardless quantification assumes a flat, polished, untilted specimen; tilt and rough surfaces bias the absorption correction.無標準品定量假設試樣平坦、拋光且未傾斜;傾斜或粗糙表面會使吸收修正產生偏差。
Point analysis: the X-ray generation volume (dashed circle on the image) can be larger than the feature, so neighbouring phases contribute to the spectrum.點分析:X 光產生體積(影像上虛線圓)可能大於目標顆粒,因此周圍相也會貢獻訊號。
EDS Quantification: Element ProportionsEDS 定量:各元素比例
| Element元素 | Line譜線 | Net counts淨計數 | wt% | ±2σ (wt%) | at% | wt% (true)(真實) | wt% |
|---|
Standardless quantification by peak fitting with a simplified ZAF (atomic number, absorption) model, normalised to 100 wt%. Hydrogen cannot be detected by EDS. ND = not detected (net peak < 3σ).以峰擬合搭配簡化 ZAF(原子序、吸收)修正之無標準品定量,並正規化至 100 wt%。EDS 無法偵測氫。ND 表示未偵測到(淨峰值 < 3σ)。
Characteristic X-ray Energies between Atomic Orbitals各元素原子軌域間的特性 X 光能量
| Z | Element元素 | Kα1 K–L3 |
Kα2 K–L2 |
Kβ1 K–M3 |
Lα1 L3–M5 |
Lβ1 L2–M4 |
Mα1 M5–N7 |
K edgeK 吸收邊 | L3 edgeL3 吸收邊 |
|---|
Siegbahn notation with IUPAC transition (final–initial vacancy level) below. Click a row to draw its energy-level diagram and mark its lines on the spectrum. Rows highlighted in green contain elements of the current specimen. Data: X-ray Data Booklet (LBNL); J.A. Bearden, Rev. Mod. Phys. 39 (1967).上方為 Siegbahn 符號,下方為 IUPAC 躍遷標記(電子空位層級)。點選任一列可繪製其能階圖並於光譜上標示譜線;綠色標示為目前試樣所含元素。資料來源:X-ray Data Booklet (LBNL);J.A. Bearden, Rev. Mod. Phys. 39 (1967)。
SEM Main Components掃描式電子顯微鏡主要部件
Electron Sources電子源比較
| Source電子源 | W | LaB6 | FEG |
|---|---|---|---|
| Emission發射機制 | Thermionic熱游離 | Thermionic熱游離 | Schottky field蕭特基場發射 |
| Brightness亮度 (A/cm2sr) | ~106 | ~107 | ~5×108 |
| Source size電子源尺寸 | 30–100 µm | 5–50 µm | 15–30 nm |
| Energy spread能量散佈 (eV) | 1.5–2.5 | 1.0–1.5 | 0.3–0.7 |
| Lifetime壽命 (h) | 40–100 | 500–1000 | >5000 |
| Gun vacuum槍室真空度 (Pa) | 10−3 | 10−5 | 10−7 |
© AEML, NTUST · Advanced Engineering Materials Laboratory, National Taiwan University of Science and Technology · SEM Virtual Lab. Educational simulation: models are simplified.先進工程材料實驗室 · 國立臺灣科技大學 · SEM 虛擬實驗室。本模擬為教學用簡化模型。
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